Heat-dissipation unit coated with oxidation-resistant nano thin film and method of depositing the oxidation-resistant nano thin film thereof

ABSTRACT

A heat-dissipation unit coated with oxidation-resistant nano thin film includes a metal main body having a heat-absorbing portion and a heat-dissipating portion, both of which are coated with at least a nano metal compound thin film. To form the nano metal compound thin film on the heat-dissipation unit, first form at least a nano compound coating on an outer surface of the heat-dissipation unit, and then supply a reduction gas into a high-temperature environment to perform a heat treatment and a reduction process on the heat-dissipation unit and the nano compound coating thereof, and finally, a nano metal compound thin film is formed on the surface of the heat-dissipation unit after completion of the heat treatment and the reduction process. With the nano metal compound thin film, the heat-dissipation unit is protected against formation of oxide on its surface and accordingly against occurrence of increased thermal resistance thereof.

This application claims the priority benefit of Taiwan patentapplication number 098145478 filed on Dec. 29, 2009.

FIELD OF THE INVENTION

The present invention relates to a heat-dissipation unit coated withoxidation-resistant nano thin film and a method of depositing theoxidation-resistant nano thin film on the heat-dissipation unit.

BACKGROUND OF THE INVENTION

When an electronic device operates, electronic elements inside thedevice would produce heat. The heat is produced mainly by an operatingchip during operation thereof. With the constantly increased performancethereof, the chip's power is now close to 100 W and the temperaturethereof would exceed 100° C. if no proper heat dissipation mechanism isprovided.

The currently used chips are usually made of a semiconductor material,such as silicon. Since a chip internally includes a large quantity ofmetal wires and insulating thin films, and the thermal expansioncoefficient of the metal wire material might be several times as high asthat of the insulating material, the chip would usually crack and becomedamaged when it continuously works at a temperature higher than 90° C.

To prevent the chip from overheat and burnout, waste heat produced byelectric current must be removed from the electronic elements as soon aspossible. To quickly remove the produced heat from the chip, the chip isusually arranged to contact with a copper sheet or is embedded in ametal-based ceramic sintered body, such as aluminum-based siliconcarbide, which has high thermal conductivity. In addition, aheat-dissipation unit is needed to help increasing the heat dissipationefficiency, so as to avoid an overheated and burnt-out chip. Theheat-dissipation unit is mainly a radiating fin assembly, a heat sink ora heat pipe. A cooling fan can also be used to assist in forcedconvection, in order to achieve desired heat dissipating and coolingeffects.

A metal-made heat radiating fin exposed to air would gradually becomeoxidized to result in electrical potential difference in the radiatingfin. Such internal electrical potential difference would in turn causeelectrochemical reaction to form metal oxide on the radiating fin. Ametal oxide has a thermal conducting efficiency much lower than that ofa pure metal, and would therefore largely reduce the heat dissipatingeffect and thermal conducting efficiency of the metal radiating fin.When the oxidation becomes worse, the oxidized metal oxide having loosestructure tends to peel off from the metal surface of the radiating finto contaminate the chip in contact with the radiating fin.

Further, an oxidized metal surface would change in color to adverselyaffect the appearance of the metal material.

And, a metal radiating fin formed through metal (such as copper oraluminum) powder sintering process and having a porous structure tendsto more easily have reduced heat dissipation performance due tooxidation. To prevent oxidation, the metal radiating fin is usuallyexternally coated with a layer of nickel or tin through a water solutionprocess. The nickel can be coated on the radiating fin in differentways, including electroplating and chemical plating (electrolessplating). However, the coating obtained through the water solutionprocess is easily subjected to contamination, such as adsorption of acidgroup anions, which would corrode the semiconductor packaging.

Further, the nickel coating or the tin coating usually has thermalconducting efficiency much lower than that of the frequently used copperradiating fin, and would therefore have adverse influence on the heatdissipating effect of copper.

It is therefore tried by the inventor to develop a heat-dissipation unitcoated with oxidation-resistant nano thin film and a method ofdepositing such oxidation-resistant nano thin film on theheat-dissipation unit, in order to overcome the drawbacks in the priorart.

SUMMARY OF THE INVENTION

A primary object of the present invention is to provide aheat-dissipation unit coated with oxidation-resistant nano thin film.

Another object of the present invention is to provide a method ofdepositing an oxidation-resistant nano thin film on a heat-dissipationunit.

To achieve the above and other objects, the heat-dissipation unit coatedwith oxidation-resistant nano thin film according to the presentinvention includes a metal main body having a heat-absorbing portion anda heat-dissipating portion, and both of the heat-absorbing portion andthe heat-dissipating portion are coated with at least a nano metalcompound thin film. The heat-dissipation unit can be a heat sink, auniform temperature plate, a radiating fin assembly, a heat pipe, a loopheat pipe, or a water block. The nano metal compound thin film is formedvia a reaction of a reduction gas with at least a nano compound coatingand the metal main body. The metal main body can be made of copper,aluminum, nickel or stainless steel.

To achieve the above and other objects, the method of depositing anoxidation-resistant nano thin film on a heat-dissipation unit accordingto the present invention includes the steps of providing aheat-dissipation unit; forming at least a nano compound coating on asurface of the heat-dissipation unit; positioning the heat-dissipationunit in a high-temperature environment; supplying a reduction gas intothe high-temperature environment to perform a heat treatment and areduction process on the heat-dissipation unit and the nano compoundcoating on the surface of the heat-dissipation unit; and forming a nanometal compound thin film on the surface of the heat-dissipation unitafter completion of the heat treatment and the reduction process. Theheat-dissipation unit can be a heat sink, a uniform temperature plate, aradiating fin assembly, a heat pipe, a loop heat pipe, or a water block.The reduction gas can be any one of H₂S, H₂, CO, NH₃, CH₄, and anycombination thereof, and is preferably H₂. The nano compound coating canbe any oxide, nitride, carbide, and sulfide, and is preferably an oxide.The oxide is selected from the group consisting of SiO₂, TiO₂, Al₂O₃,ZrO₂, CaO, K₂O, and ZnO. The heat-dissipation unit is made of a materialselected from the group consisting of copper, aluminum, nickel, andstainless steel. The nano compound coating is formed on the surface ofthe heat-dissipation unit through a process selected from the groupconsisting of physical vapor deposition (PVD), chemical vapor deposition(CVD), and sol-gel deposition. Using the oxidation-resistant nano thinfilm deposition method of the present invention, at least a nano metalcompound thin film can be formed on the heat-dissipation unit to protectthe latter against formation of oxide on its surface and accordinglyagainst occurrence of increased thermal resistance thereof.

BRIEF DESCRIPTION OF THE DRAWINGS

The structure and the technical means adopted by the present inventionto achieve the above and other objects can be best understood byreferring to the following detailed description of the preferredembodiments and the accompanying drawings, wherein

FIG. 1 a is a schematic view of a heat-dissipation unit according to afirst embodiment of the present invention;

FIG. 1 b is a schematic view of a heat-dissipation unit according to asecond embodiment of the present invention;

FIG. 1 c is a schematic view of a heat-dissipation unit according to athird embodiment of the present invention;

FIG. 1 d is a schematic view of a heat-dissipation unit according to afourth embodiment of the present invention;

FIG. 1 e is a schematic view of a heat-dissipation unit according to afifth embodiment of the present invention;

FIG. 1 f is a schematic view of a heat-dissipation unit according to asixth embodiment of the present invention;

FIG. 1 g is an enlarged view of the circled area 1 g of FIG. 1 a;

FIG. 2 a is a schematic view of a heat-dissipation unit according to aseventh embodiment of the present invention;

FIG. 2 b is a schematic view of a heat-dissipation unit according to aneighth embodiment of the present invention;

FIG. 2 c is an enlarged view of the circled area 2 c of FIG. 2 a;

FIG. 3 is a flowchart showing the steps included in a method ofdepositing an oxidation-resistant nano thin film on a heat-dissipationunit according to a first embodiment of the present invention;

FIG. 4 schematically illustrates a reduction reaction occurred on aheat-dissipation unit of the present invention and a nano compoundcoating thereof;

FIG. 5 is a flowchart showing the steps included in a method ofdepositing an oxidation-resistant nano thin film on a heat-dissipationunit according to a second embodiment of the present invention;

FIG. 6 schematically illustrates the forming of a nano compound coatingon a heat-dissipation unit of the present invention;

FIG. 7 schematically illustrates a heat treatment and reduction processperformed on a heat-dissipation unit of the present invention and a nanocompound coating thereof; and

FIGS. 8 to 14 are X-ray photoelectron spectroscopy spectra analyzing thesurface of the heat-dissipation units according to different embodimentsof the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will now be described with some preferredembodiments thereof and with reference to the accompanying drawings. Forthe purpose of easy to understand, elements that are the same in thepreferred embodiments are denoted by the same reference numerals.

Please refer to FIGS. 1 a, 1 b, 1 c, 1 d, 1 e, 1 f, 1 g and 4. As shown,a heat-dissipation unit 1 coated with oxidation-resistant nano thin filmaccording to any one of a first to a sixth embodiment of the presentinvention includes a metal main body 11 having a heat-absorbing portion111 and a heat-dissipating portion 112. The heat-absorbing portion 111is arranged on one side of the metal main body 11, and theheat-dissipating portion 112 is arranged on an opposite side of themetal main body 11. The heat-absorbing portion 111 and theheat-dissipating portion 112 are externally coated with at least a nanometal compound thin film 2.

The metal main body 11 is formed of a material selected from the groupconsisting of copper, aluminum, nickel, and stainless steel.

In the first embodiment of the present invention, the heat-dissipationunit 1 is a heat sink as shown in FIG. 1 a. In the second embodiment ofthe present invention, the heat-dissipation unit 1 is a uniformtemperature plate as shown in FIG. 1 b. In the third embodiment of thepresent invention, the heat-dissipation unit 1 is a radiating finassembly as shown in FIG. 1 c. In the fourth embodiment of the presentinvention, the heat-dissipation unit 1 is a heat pipe as shown in FIG. 1d. In the fifth embodiment of the present invention, theheat-dissipation unit 1 is a loop heat pipe as shown in FIG. 1 e. In thesixth embodiment of the present invention, the heat-dissipation unit 1is a water block as shown in FIG. 1 f.

The at least one nano metal compound thin film 2 is formed by reactionof at least a reduction gas 5 with at least one nano compound coating 6and the metal main body 11. The at least one nano compound coating 6 iscoated on an outer surface of the metal main body 11, and the reductiongas is supplied to the metal main body 11 in a high-temperatureenvironment, so that a diffusion reaction and a reduction-oxidationreaction occur between the reduction gas 5 and the nano compound coating6 and the metal main body 11. At completion of the reactions, the atleast one nano metal compound thin film 2 is formed on the metal mainbody 11.

Please refer to FIGS. 1 b, 1 d, 1 e, 1 f, 2 a, 2 b, 2 c and 7. As shown,the heat-dissipation unit 1 according to any one of the second, thefourth, the fifth and the sixth embodiment of the present inventionincludes a metal main body 11 defining a chamber 113 therein. Thechamber 113 is provided on an interior surface thereof with a wickstructure 114, over which at least a nano metal compound thin film 2 iscoated, as can be most clearly seen in FIG. 2 c.

The metal main body 11 is formed of a material selected from the groupconsisting of copper, aluminum, nickel, and stainless steel.

The wick structure 114 can be a grooved wick structure as shown in FIG.2 a, a mesh wick structure as shown in FIG. 2 b, a copper sinteredporous wick structure as shown FIG. 1 d, or a composite wick structureincluding any combination of the grooved, mesh, and copper sinteredporous wick structures (not shown).

The wick structure 114 is formed of a material selected from the groupconsisting of copper, aluminum, nickel, and stainless steel.

The heat-dissipation unit 1 can be any one of the uniform temperatureplate shown in FIG. 1 b, the heat pipe shown in FIG. 1 d, the loop heatpipe shown in FIG. 1 e, and the water block shown in FIG. 1 f.

The at least one nano metal compound thin film 2 is formed by reactionof at least a reduction gas 5 with at least one nano compound coating 6and the aforesaid wick structure 114. The wick structure 114 is coatedwith the at least one nano compound coating 6, and the metal main body11 is subjected to a heat treatment in a high-temperature environmentwhile the reduction gas is supplied into the metal main body 11, so thata diffusion reaction and a reduction-oxidation reaction occur betweenthe reduction gas 5 and the nano compound coating 6 and the wickstructure 114. At completion of the reactions, the at least one nanometal compound thin film 2 is formed on the wick structure 114.

In the above embodiments, the nano compound coating 6 can be formed ofany oxide, nitride, carbide or sulfide; and is preferably formed of anoxide. The oxide is selected from the group consisting of SiO₂, TiO₂,Al₂O₃, ZrO₂, CaO, K₂O, and ZnO. And, the reduction gas 5 can be any oneof H₂S, H₂, CO, and NH₃; and is preferably H₂.

In the above embodiments, only one single layer or a plurality of layersof the nano compound coating 6 can be formed. In the case of forming aplurality of layers of the nano compound coating 6, the oxide, nitride,carbide and sulfide can be alternately coated.

FIG. 3 is a flowchart showing the steps included in a method accordingto a first embodiment of the present invention for depositing anoxidation-resistant nano thin film on a heat-dissipation unit. Pleaserefer to FIGS. 1 a, 3 and 4 at the same time. The method includes thefollowing steps:

Step S1: Providing a heat-dissipation unit 1.

A heat-dissipation unit 1 is provided. The heat-dissipation unit 1 canbe a heat sink as shown in FIG. 1 a, a uniform temperature plate asshown in FIG. 1 b, a radiating fin assembly as shown in FIG. 1 c, a heatpipe as shown in FIG. 1 d, a loop heat pipe as shown in FIG. 1 e, or awater block as shown in FIG. 1 f. The method according to the firstembodiment of the present invention is explained based on aheat-dissipation unit 1 configured as a heat sink.

Step S2: Forming at least a nano compound coating 6 on an outer surfaceof the heat-dissipation unit 1 (i.e. the heat sink).

At least a nano compound coating 6 is formed on an outer surface of theheat-dissipation unit 1 (i.e. the heat sink). The nano compound coating6 can be formed of any oxide, nitride, carbide or sulfide. The methodaccording to the first embodiment of the present invention is explainedbased on a nano compound coating 6 formed of an oxide. The oxide isselected from the group consisting of SiO₂, TiO₂, Al₂O₃, ZrO₂, CaO, K₂O,and ZnO. And, only one single layer or a plurality of layers of the nanocompound coating 6 can be formed. In the case of forming a plurality oflayers of the nano compound coating 6, either different oxides arealternatively coated or the oxide, nitride, carbide and sulfide arealternately coated.

The nano compound coating 6 can be formed through physical vapordeposition (PVD), chemical vapor deposition (CVD), or sol-gel process.The sol-gel process can be implemented in any one of the followingmanners: dip-coating deposition, settle-coating deposition, spin-coatingdeposition, brush-coating deposition, and wet-coating deposition.

The method according to the first embodiment of the present invention isexplained based on at least one layer of the nano compound coating 6formed on the heat-dissipation unit 1 through PVD. The deposited nanocompound coating 6 has a thickness about 1 nm-100 nm. In the process ofPVD, when the heat-dissipation unit 1 has a temperature about 150° C.,the target material is zirconium (Zr) or titanium (Ti), and the vacuumdegree of the working environment is 10⁻³ mbar, a nano compound coating6 with high density and smoothness can be obtained.

Step S3: Supplying a reduction gas 5 into a high-temperature environmentto perform a heat treatment and a reduction process on theheat-dissipation unit 1 and the nano compound coating 6 on the surfaceof the heat-dissipation unit 1.

As shown in FIG. 4, the heat-dissipation unit 1 (i.e. the heat sink) ispositioned in a high-temperature environment, and the reduction gas 5 issupplied into the high-temperature environment to perform a heattreatment and reduction process on the nano compound coating 6 on theheat-dissipation unit 1. The reduction gas 5 can be any one of H₂S, H₂,CO, and NH₃; and is preferably H₂. A reduction temperature for thereduction process is ranged between 600° C. and 1000° C., and ispreferably ranged between 650° C. and 850° C.

Step S4: Forming a nano metal compound thin film 2 on theheat-dissipation unit 1 after completion of the heat treatment andreduction process.

After completion of the heat treatment and the reduction process in thestep S3, a diffusion reaction and a reduction-oxidation reaction occurbetween the reduction gas 5 (i.e. H₂) and the nano compound coating 6and the heat-dissipation unit 1. And, after completion of thesereactions, at least a nano metal compound thin film 2 is formed on theheat-dissipation unit 1 (i.e. the heat sink).

FIG. 5 is a flowchart showing the steps included in a method accordingto a second embodiment of the present invention for depositing anoxidation-resistant nano thin film on a heat-dissipation unit. Pleaserefer to FIGS. 1 d, 5, 6 and 7 at the same time. The method includes thefollowing steps:

Step S1: Providing a heat-dissipation unit 1 internally provided with awick structure 114.

A heat-dissipation 1 internally provided with a wick structure 114 isprovided. The heat-dissipation unit 1 can be a uniform temperature plateas shown in FIG. 1 b, a heat pipe as shown in FIG. 1 d, a loop heat pipeas shown in FIG. 1 e, or a water block as shown in FIG. 1 f. The methodaccording to the second embodiment of the present invention is explainedbased on a heat-dissipation unit 1 configured as a heat pipe shown inFIG. 1 d.

Step S2: Forming at least a nano compound coating 6 over the wickstructure 114 in the heat-dissipation unit 1 through a sol-gel process.

At least a nano compound coating 6 is formed on the wick structure 114in the heat-dissipation unit 1 (i.e. the heat pipe). The nano compoundcoating 6 can be formed of any oxide, nitride, carbide or sulfide. Themethod according to the second embodiment of the present invention isexplained based on a nano compound coating 6 formed of an oxide. Theoxide is selected from the group consisting of SiO₂, TiO₂, Al₂O₃, ZrO₂,CaO, K₂O, and ZnO. In the illustrated second embodiment, the oxide isAl₂O₃. And, only one single layer or a plurality of layers of the nanocompound coating 6 can be formed. In the case of forming a plurality oflayers of the nano compound coating 6, either different oxides arealternatively coated or the oxide, nitride, carbide and sulfide arealternately coated. The nano compound coating 6 can be formed throughsol-gel process. The sol-gel process can be implemented in any one ofthe following manners: dip-coating deposition, settle-coatingdeposition, spin-coating deposition, brush-coating deposition, andwet-coating deposition.

In the illustrated second embodiment, while the oxide nano thin film 6is formed through dip-coating deposition, it is understood the oxidenano thin film 6 can also be formed through other types of depositionaccording to the sol-gel process. As shown in FIG. 6, in the sol-gelprocess, Al₂O₃ particles are soaked in a water solution 3, and the watersolution 3 along with the Al₂O₃ particles are poured into a tank 4 andthoroughly mixed, so that the Al₂O₃ particles are evenly dispersed inthe water solution 3 contained in the tank 4. Then, immerse the portionof the heat-dissipation unit 1 with the wick structure 114 in the watersolution 3 contained in the tank 4, and allow the heat-dissipation unit1 to remain still in the water solution 3 in the tank 4 for apredetermined period of time. Finally, remove the heat-dissipation unit1 from the water solution 3 or drain off the water solution 3 from thetank 4, so that the Al₂O₃ particles are attached to an outer surface ofthe wick structure 114.

Step S3: Supplying a reduction gas 5 into a high-temperature environmentto perform a heat treatment and a reduction process on the wickstructure 114 of the heat-dissipation unit 1 and the nano compoundcoating 6 on the surface of the wick structure 114.

The heat-dissipation unit 1 (i.e. the heat pipe) is positioned in ahigh-temperature environment, and the reduction gas 5 is supplied intothe high-temperature environment to perform a heat treatment and areduction process on the wick structure 114 and the nano compoundcoating 6. The reduction gas 5 can be any one of H₂₅, H₂, CO, and NH₃;and is preferably H₂. A reduction temperature for the reduction processis ranged between 600° C. and 1000° C., and is preferably ranged between650° C. and 850° C.

Step S4: Forming a nano metal compound thin film 2 on the wick structure114 of the heat-dissipation unit 1 after completion of the heattreatment and reduction process.

After completion of the reduction process in the step S3, a diffusionreaction and a reduction-oxidation reaction occur between the reductiongas 5 (i.e. H₂) and the nano compound coating 6 and the wick structure114. And, after completion of these reactions, at least a nano metalcompound thin film 2 is formed on the wick structure 114 of theheat-dissipation unit 1.

In the methods according to different embodiments of the presentinvention, the Al₂O₃ used is a nano-sol surface pretreatment chemical(Product Number A-100) supplied by Chung-Hsin Technological Consultants,Inc. (Taiwan). This nano-sol surface pretreatment chemical mainlycontains 1.0% of nanoparticles of Al₂O₃ having a particle size 10 nm,and has the product characteristics of a specific gravity of 1.01±0.03;a flash point higher than 100° C.; a colorless and transparentappearance; a pH value of 7.0±0.5; and a working temperature of 10-40°C.

After completion of the deposition of the oxidation-resistant nano thinfilm on the heat-dissipation unit using the methods according todifferent embodiments of the present invention, the structure of theformed nano metal compound thin films is analyzed via X-rayphotoelectron spectroscopy (XPS) technique. In formation about theequipment used in the XPS analysis is as follows:

Name of equipment supplier: PerkinElmer (USA)

Voltage: 15 KV

Watt: 300 W

Vacuum degree: 2.5*10⁻⁹ torr

Following steps are included in the XPS analysis of the nano metalcompound thin films formed according to the present invention:

Step 1: Performing a full scan on the nano metal compound thin film witha spot size of 0.1 Å;

Step 2: Etching downward to two different depths of 10 Å and 500 Å belowthe surface of the nano metal compound thin film, and performing amultiplex (local) scan with a spot size of 0.05 Å; and

Step 3: Comparing the obtained XPS spectra with standard spectra andperforming a quantitative analysis.

Please refer to FIGS. 8 and 13 that are full-scan XPS spectra ofspecimens with the formed nano metal compound thin films. As can be seenfrom the spectra, there are copper, aluminum and oxygen contained in thenano metal compound thin films.

FIGS. 9 and 12 are local-scan XPS spectra showing copper binding energyvalues. The local scan is performed at etching depths of 1 nm and 50 nminto the material. As can be seen from FIG. 12, there is a layer ofcopper oxide less than 1 nm in thickness formed on the surface of thematerial, while copper exists 1 nm below the surface of the material.

FIGS. 10, 11 and 14 are local-scan XPS spectra showing aluminum bindingenergy values. The local scan is performed at etching depths of 1 nm and50 nm into the material. As can be seen from these figures, there is alayer of Al₂O₃ compound (77.44 eV) on the material surface. This layerof compound is a chemical compound of Al₂O₃ and CuO, as shown in FIG.11. When the local scan is performed at an etching depth of 1 nm, Al₂O₃(74.86 eV) appears; and when the local scan is performed at an etchingdepth of 50 nm, Al₂O₃ still appears, as shown in FIG. 14.

From the above analysis, it can be found the Al₂O₃ sol is a highlystrong oxidant. When the Al₂O₃ sol is coated on the surface of copper,it will cause oxidation of the copper quickly, particularly at a hightemperature. When H₂ is used in a high-temperature environment to reducethe heat-dissipation unit coated with copper oxide and aluminum oxide,the copper oxide on the surface of the heat-dissipation unit is reducedand reacts with the aluminum oxide to form a compound CuAl₂O₃, as shownin FIG. 8. This layer of compound is able to stop oxidation of copperand forms an oxidation-resistant nano thin film.

1. A heat-dissipation unit coated with oxidation-resistant nano thinfilm, comprising a metal main body having a heat-absorbing portion and aheat-dissipating portion; and both of the heat-absorbing portion and theheat-dissipating portion being coated with at least a nano metalcompound thin film.
 2. The heat-dissipation unit coated withoxidation-resistant nano thin film as claimed in claim 1, wherein theheat-dissipation unit is selected from the group consisting of a heatsink, a uniform temperature plate, a radiating fin assembly, a heatpipe, a loop heat pipe, and a water block.
 3. The heat-dissipation unitcoated with oxidation-resistant nano thin film as claimed in claim 1,wherein the nano metal compound thin film is formed via a reaction of areduction gas with at least a nano compound coating and the metal mainbody.
 4. The heat-dissipation unit coated with oxidation-resistant nanothin film as claimed in claim 3, wherein the nano compound coating isformed of a material selected from the group consisting of oxide,nitride, carbide, and sulfide.
 5. The heat-dissipation unit coated withoxidation-resistant nano thin film as claimed in claim 4, wherein theoxide is selected from the group consisting of SiO₂, TiO₂, Al₂O₃, ZrO₂,CaO, K₂O, and ZnO.
 6. The heat-dissipation unit coated withoxidation-resistant nano thin film as claimed in claim 1, wherein themetal main body is formed of a material selected from the groupconsisting of copper, aluminum, nickel, and stainless steel.
 7. Aheat-dissipation unit coated with oxidation-resistant nano thin film,comprising a metal main body internally defining a chamber; the chamberbeing provided on an interior surface with a wick structure, and thewick structure being coated with at least a nano metal compound thinfilm.
 8. The heat-dissipation unit coated with oxidation-resistant nanothin film as claimed in claim 7, wherein the heat-dissipation unit isselected from the group consisting of a uniform temperature plate, aheat pipe, a flat heat pipe, a loop heat pipe, and a water block.
 9. Theheat-dissipation unit coated with oxidation-resistant nano thin film asclaimed in claim 8, wherein the nano metal compound thin film is formedvia a reaction of a reduction gas with at least a nano compound coatingand the wick structure.
 10. The heat-dissipation unit coated withoxidation-resistant nano thin film as claimed in claim 9, wherein thenano compound coating is formed of a material selected from the groupconsisting of nitride, carbide, sulfide, and oxide.
 11. Theheat-dissipation unit coated with oxidation-resistant nano thin film asclaimed in claim 10, wherein the oxide is selected from the groupconsisting of SiO₂, TiO₂, Al₂O₃, ZrO₂, CaO, K₂O, and ZnO.
 12. Theheat-dissipation unit coated with oxidation-resistant nano thin film asclaimed in claim 7, wherein the metal main body is formed of a materialselected from the group consisting of copper, aluminum, nickel, andstainless steel.
 13. A method of depositing oxidation-resistant nanothin film on heat-dissipation unit, comprising the following steps:providing a heat-dissipation unit; forming at least a nano compoundcoating on a surface of the heat-dissipation unit; supplying a reductiongas into a high-temperature environment to perform a heat treatment anda reduction process on the heat-dissipation unit and the nano compoundcoating on the surface of the heat-dissipation unit; and forming a nanometal compound thin film on the heat-dissipation unit after completionof the heat treatment and the reduction process.
 14. The method ofdepositing oxidation-resistant nano thin film on heat-dissipation unitas claimed in claim 13, wherein the heat-dissipation unit is selectedfrom the group consisting of a heat sink, a radiating fin assembly, aheat pipe, a flat heat pipe, a loop heat pipe, and a water block. 15.The method of depositing oxidation-resistant nano thin film onheat-dissipation unit as claimed in claim 13, wherein the reduction gasis selected from the group consisting of H₂S, H₂, CO, and NH₃.
 16. Themethod of depositing oxidation-resistant nano thin film onheat-dissipation unit as claimed in claim 13, wherein the reductionprocess is performed at a temperature ranged between 600° C. and 1000°C.
 17. The method of depositing oxidation-resistant nano thin film onheat-dissipation unit as claimed in claim 13, wherein the reductionprocess is performed at a temperature ranged between 650° C. and 850° C.18. The method of depositing oxidation-resistant nano thin film onheat-dissipation unit as claimed in claim 13, wherein the nano compoundcoating is formed on the surface of the heat-dissipation unit through aprocess selected from the group consisting of physical vapor deposition(PVD), chemical vapor deposition (CVD), and sol-gel process.
 19. Themethod of depositing oxidation-resistant nano thin film onheat-dissipation unit as claimed in claim 18, wherein the sol-gelprocess is implemented in a manner selected from the group consisting ofdip-coating deposition, settle-coating deposition, spin-coatingdeposition, brush-coating deposition, and wet-coating deposition.